inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor irf 462 description repetitive avalanche ratings dynamic dv/dt rating hermetically sealed simple drive requirements ease of paralleling applications designed for applications such as switching power supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 19 a p tot total dissipation@tc=25 300 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.42 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor irf 462 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 0.25ma 500 v v gs(th) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 12a 0.35 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds = 500v; v gs = 0 250 ua v sd diode forward voltage i f = 21a; v gs = 0 1.8 v ciss input capacitance v ds =250v,v gs =10v, f=1.0mhz 4100 pf coss output capacitance 480 pf crss reverse transfer capacitance 84 pf switching characteristics (t c =25 ) symbol parameter conditions min typ max unit td(on) turn-on delay time v dd =250v,i d =21a r g =4.3 23 35 ns tr rise time 81 120 ns td(off) turn-off delay time 85 130 ns tf fall time 65 98 ns pdf pdffactory pro www.fineprint.cn
|
